Garsia-Garsia, E.; Yanez-Limon, M.; Vorobiev, Y.; Espinoza-Beltran, F.; Gonzalez-Hernandez, J.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 1998)
Effects of Ni and Se incorporation on the crystallization kinetics of Ge:Sb:Te alloys have been studied. Both elements were found to increase the stability of the amorphous structure. The kinetics of crystallization under ...